december 2013 fcp190n60 / fcpf190n60 ? n-channel superfet ? ii mosfet ?2012 fairchild semiconductor corporation fcp190n60 / fcpf190n60 rev. c16 www.fairchildsemi.com 1 fcp190n60 / fcpf190n60 n-channel superfet ? ii mosfet 600 v, 20.2 a, 199 m features ?650 v @ t j = 150c ?typ. r ds(on) = 170 m ? ultra low gate charge (typ. q g = 57 nc) ? low effective output capacitance (typ. c oss(eff.) = 160 pf) ? 100% avalanche tested ?rohs compliant applications ? lcd / led / pdp tv lighting ? solar inverter ? ac-dc power supply description superfet ? ii mosfet is fairchil d semiconductor?s brand-new high voltage super-junction (sj) mosf et family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. this technology is tailored to minimize conduction loss, provide superior switching perfor- mance, dv/dt rate and higher avalanche energy. consequently, superfet ii mosfet is very suitable for the switching power applications such as pfc, server/telecom power, fpd tv power, atx power and industrial power applications. absolute maximum ratings t c = 25 o c unless otherwise noted. *drain current limited by maximum junction temperature. thermal characteristics symbol parameter fcp190n60 fcpf190n60 unit v dss drain to source voltage 600 v v gss gate to source voltage - dc 20 v - ac (f > 1 hz) 30 i d drain current - continuous (t c = 25 o c) 20.2 20.2* a - continuous (t c = 100 o c) 12.7 12.7* i dm drain current - pulsed (note 1) 60.6 60.6* a e as single pulsed avalanche energy (note 2) 400 mj i ar avalanche current (note 1) 4.0 a e ar repetitive avalanche energy (note 1) 2.1 mj dv/dt mosfet dv/dt 100 v/ns peak diode recovery dv/dt (note 3) 20 p d power dissipation (t c = 25 o c) 208 39 w - derate above 25 o c1.670.31w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering, 1/8? from case for 5 seconds 300 o c symbol parameter fcp190n60 fcpf190n60 unit r jc thermal resistance, junction to case, max. 0.6 3.2 o c/w r ja thermal resistance, junction to ambient, max. 62.5 62.5 to-220 g d s to-220f g d s g s d
fcp190n60 / fcpf190n60 ? n-channel superfet ? ii mosfet ?2012 fairchild semiconductor corporation fcp190n60 / fcpf190n60 rev. c16 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics part number top mark package packing method reel size tape width quantity fcp190n60 fcp190n60 to-220 tube n/a n/a 50 units fcpf190n60 fcpf190n60 to-220f tube n/a n/a 50 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0 v, i d = 10 ma, t j = 25 c 600 - - v v gs = 0 v, i d = 10 ma, t j = 150 c 650 - - bv dss / t j breakdown voltage temperature coefficient i d = 10 ma, referenced to 25 o c - 0.67 - v/ o c bv ds drain to source avalanche breakdown voltage v gs = 0 v, i d = 20 a - 700 - v i dss zero gate voltage drain current v ds = 480 v, v gs = 0 v - - 1 a v ds = 480 v, t c = 125 o c--10 i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-3.5v r ds(on) static drain to source on resistance v gs = 10 v, i d = 10 a - 0.17 0.199 g fs forward transconductance v ds = 20 v, i d = 10 a -21-s c iss input capacitance v ds = 25 v, v gs = 0 v f = 1 mhz - 2220 2950 pf c oss output capacitance - 1630 2165 pf c rss reverse transfer capacitance - 85 128 pf c oss output capacitance v ds = 380 v, v gs = 0 v, f = 1 mhz - 42 - pf c oss(eff.) effective output capacitance v ds = 0 v to 480 v, v gs = 0 v - 160 - pf q g(tot) total gate charge at 10v v ds = 380 v, i d = 10 a, v gs = 10 v (note 4) -5774nc q gs gate to source gate charge - 9 - nc q gd gate to drain ?miller? charge - 21 - nc esr equivalent series resistance f = 1 mhz - 1 - t d(on) turn-on delay time v dd = 380 v, i d = 10 a, v gs = 10 v, r g = 4.7 (note 4) -2050ns t r turn-on rise time - 10 30 ns t d(off) turn-off delay time - 64 138 ns t f turn-off fall time - 5 20 ns i s maximum continuous drain to source diode forward current - - 20.2 a i sm maximum pulsed drain to source diode forward current - - 60.6 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 10 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 10 a, di f /dt = 100 a/ s - 280 - ns q rr reverse recovery charge - 3.8 - c notes: 1. repetitive rating: pulse-width limited by maximum junction temperature. 2. i as = 4 a, v dd = 50 v, r g = 25 , starting t j = 25 c. 3. i sd 10 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics.
fcp190n60 / fcpf190n60 ? n-channel superfet ? ii mosfet ?2012 fairchild semiconductor corporation fcp190n60 / fcpf190n60 rev. c16 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.3 1 10 50 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain to source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v 2345678 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain cu rrent[a] v gs , gate to source volta g e [ v ] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 1020304050 0.1 0.2 0.3 0.4 0.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain to source on-resistance i d , drain current [a] 0.1 1 10 100 600 0.5 1 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain to source voltage [v] 0 204060 0 2 4 6 8 10 *note: i d = 10a v ds = 120v v ds = 300v v ds = 480v v gs , gate to source voltage [v] q g , total gate charge [nc]
fcp190n60 / fcpf190n60 ? n-channel superfet ? ii mosfet ?2012 fairchild semiconductor corporation fcp190n60 / fcpf190n60 rev. c16 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum safe operating area for fcp190n60 for fcpf190n60 figure 11. maximum drain current figure 12. eoss vs. drain to source voltage vs. case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain to source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 10a r ds(on) , [normalized] drain to source on-resistance t j , junction temperature [ o c] 0.1 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain to source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0.1 1 10 100 1000 0.01 0.1 1 10 100 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain to source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ o c ] e oss , [ j ] v ds , drain to source voltage [ v ]
fcp190n60 / fcpf190n60 ? n-channel superfet ? ii mosfet ?2012 fairchild semiconductor corporation fcp190n60 / fcpf190n60 rev. c16 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 13. transient thermal response curve for fcp190n60 figure 14. transient thermal response curve for fcpf190n60 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.6 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w] t 1 , rectangular pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 110 100 0.01 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.2 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w] t 1 , rectangular pulse duration [sec]
fcp190n60 / fcpf190n60 ? n-channel superfet ? ii mosfet ?2012 fairchild semiconductor corporation fcp190n60 / fcpf190n60 rev. c16 www.fairchildsemi.com 6 figure 15. gate charge test circuit & waveform figure 16. resistive switch ing test circuit & waveforms figure 17. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v gs i g = const.
fcp190n60 / fcpf190n60 ? n-channel superfet ? ii mosfet ?2012 fairchild semiconductor corporation fcp190n60 / fcpf190n60 rev. c16 www.fairchildsemi.com 7 figure 18. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fcp190n60 / fcpf190n60 ? n-channel superfet ? ii mosfet ?2012 fairchild semiconductor corporation fcp190n60 / fcpf190n60 rev. c16 www.fairchildsemi.com 8 mechanical dimensions figure 19. to-220, molded, 3-lead, jedec variation ab package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt220-003
fcp190n60 / fcpf190n60 ? n-channel superfet ? ii mosfet ?2012 fairchild semiconductor corporation fcp190n60 / fcpf190n60 rev. c16 www.fairchildsemi.com 9 mechanical dimensions figure 20. to220, molded, 3-lead, full pack, eiaj sc91, straight lead package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/ packagedetails.html?id=pn_tf22s-003
fcp190n60 / fcpf190n60 ? n-channel superfet ? ii mosfet ?2012 fairchild semiconductor corporation fcp190n60 / fcpf190n60 rev. c16 www.fairchildsemi.com 10 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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